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相关论文: Few layers graphene on 6H-SiC(000-1): an STM study

200 篇论文

Most experimental studies to date of multilayer epitaxial graphene on C-face SiC have indicated that the electronic states of different layers are decoupled as a consequence of rotational stacking. We have measured the third order nonlinear…

介观与纳米尺度物理 · 物理学 2013-05-30 Dong Sun , Julien Rioux , J. E. Sipe , Yang Zou , Momchil Mihnev , Claire Berger , Walt A. de Heer , Phillip N. First , Theodore B. Norris

We show that the low-energy electronic structure of arbitrarily stacked graphene multilayers with nearest-neighbor interlayer tunneling consists of chiral pseudospin doublets. Although the number of doublets in an $N$-layer system depends…

介观与纳米尺度物理 · 物理学 2008-04-11 Hongki Min , A. H. MacDonald

Classical molecular-dynamics simulations were carried out to study epitaxial growth of graphene on 6H-SiC(0001) substrate. It was found that there exists a threshold annealing temperature above which we observe formation of graphitic…

介观与纳米尺度物理 · 物理学 2012-02-23 N. Jakse , R. Arifin , S. K. Lai

Multilayer graphene (MLG) thin films are deposited on silicon oxide substrates by mechanical exfoliation (or 'scotch-tape method') from Kish graphite. The thickness and number of layers are determined from both Atomic Force Microscopy (AFM)…

介观与纳米尺度物理 · 物理学 2014-08-26 E. S. Sadki , H. Okazaki , T. Watanabe , T. Yamaguchi , Y. Takano

We report on the Scanning Tunneling Microscope (STM) observation of linear fringes together with spatially varying super-lattice structures on (0001) graphite (HOPG) surface. The structure, present in a region of a layer bounded by two…

其他凝聚态物理 · 物理学 2014-02-11 S. K. Choudhary , A. K. Gupta

Carbon nanomaterials continue to amaze scientists due to their exceptional physical properties. Recently there have been theoretical predictions and first reports on graphene multilayers, where, due to the rotation of the stacked layers,…

Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal…

介观与纳米尺度物理 · 物理学 2009-11-13 Y. Q. Wu , P. D. Ye , M. A. Capano , Y. Xuan , Y. Sui , M. Qi , J. A. Cooper

We propose a novel analytical model for anisotropic multi-layer cylindrical structures containing graphene layers. The general structure is formed by an aperiodic repetition of a three-layer sub-structure, where a graphene layer, with an…

光学 · 物理学 2021-03-17 Mohammad Bagher Heydari , Mohammad Hashem Vadjed Samiei

The Seebeck coefficient in multilayer graphene is investigated within the density-functional theory, using the semiclassical Boltzmann equations and interpolating the bands in a maximally-localized Wannier functions basis set. We compare…

材料科学 · 物理学 2015-01-07 Malgorzata Wierzbowska , Adam Dominiak , Giovanni Pizzi

We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the…

材料科学 · 物理学 2015-05-27 C. Mathieu , N. Barrett , J. Rault , Y. Y. Mi , B. Zhang , W. A. de Heer , C. Berger , E. H. Conrad , O. Renault

Physical vapor deposition of Si onto transferred graphene is investigated. At elevated temperatures, Si nucleates preferably on wrinkles and multilayer graphene islands. In some cases, however, Si can be quasi-selectively grown only on the…

We report scanning tunneling microscopy (STM) and spectroscopy (STS) of twisted graphene bilayer on SiC substrate. For twist angle ~ 4.5o the Dirac point ED is located about 0.40 eV below the Fermi level EF due to the electron doping at the…

强关联电子 · 物理学 2015-06-03 Lan Meng , Yanfeng Zhang , Wei Yan , Lei Feng , Lin He , Rui-Fen Dou , Jia-Cai Nie

We report on the charge spill-out and work function of epitaxial few-layer graphene on 6H-SiC(0001). Experiments from high-resolution, energy-filtered X-ray photoelectron emission microscopy (XPEEM) are combined with ab initio Density…

Many disordered superconducting films exhibit smeared tunneling spectra with evident in-gap states. We demonstrated that the tunneling density of states in ultrathin MoC films is gapless and can be described by the Dynes version of the BCS…

We study the local density of states at and around a substituting impurity and use these results to compute current versus bias characteristic curves of Scanning Tunneling Microscopy (STM) experiments done on the surface of graphene. This…

介观与纳米尺度物理 · 物理学 2009-04-28 N. M. R. Peres , Shan-Wen Tsai , J. E. Santos , R. M. Ribeiro

Atomic modulations of two-dimensional materials using scanning tunneling microscope (STM) tip-induced forces modifies their mechanical and electrical properties. In situ topographic and spectroscopic probing through electrical tunneling has…

材料科学 · 物理学 2022-02-02 N. Sarkar , P. R. Bandaru , R. C. Dynes

Photoemission, from core levels and valence band, and low-energy electron diffraction (LEED) have been employed to investigate the electronic and structural properties of novel graphene-ferromagnetic (G-FM) systems,obtained by intercalation…

Local electronic structures of nanometer-sized patches of epitaxial graphene and its interface layer with SiC(0001) have been studied by atomically resolved scanning tunneling microscopy and spectroscopy. Localized states belonging to the…

介观与纳米尺度物理 · 物理学 2015-05-18 J. Cervenka , K. van de Ruit , C. F. J. Flipse

Graphene has emerged as an electronic material that is promising for device applications and for studying two-dimensional electron gases with relativistic dispersion near two Dirac points. Nonetheless, deviations from Dirac-like…

材料科学 · 物理学 2009-07-23 M. L. Teague , A. P. Lai , J. Velasco , C. R. Hughes , A. D. Beyer , M. W. Bockrath , C. N. Lau , N. -C. Yeh

Direct, tunable coupling between individually assembled graphene layers is a next step towards designer two-dimensional (2D) crystal systems, with relevance for fundamental studies and technological applications. Here we describe the…