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相关论文: Raman Fingerprint of Charged Impurities in Graphen…

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Graphene is an ideal platform to study the coherence of quantum interference pathways by tuning doping or laser excitation energy. The latter produces a Raman excitation profile that provides direct insight into the lifetimes of…

介观与纳米尺度物理 · 物理学 2023-01-24 Xue Chen , Sven Reichardt , Miao-Ling Lin , Yu-Chen Leng , Yan Lu , Heng Wu , Rui Mei , Ludger Wirtz , Xin Zhang , Andrea C. Ferrari , Ping-Heng Tan

Edges naturally exist in a single-layer graphene sample. Similarly, individual graphene layers in a multilayer graphene sample contribute their own edges. We study the Raman spectrum at the edge of a graphene layer laid on n layer graphene…

材料科学 · 物理学 2015-01-15 Q. -Q. Li , X. Zhang , W. -P. Han , Y. Lu , W. Shi , J. -B. Wu , P. -H. Tan

The Raman scattering spectra (RS) of two series of monolayer graphene samples irradiated with various doses of C$^{+}$ and Xe$^{+}$ ions were measured after annealing in high vacuum, and in forming gas (95\%Ar+5\%H$_{2}$). It was found that…

介观与纳米尺度物理 · 物理学 2017-09-28 E. Zion , A. Butenko , Yu. Kaganovskii , V. Richter , L. Wolfson , A. Sharoni , E. Kogan , M. Kaveh , I. Shlimak

We use first-principles density-functional calculations to determine the frequency shift of the A$'_1$-${\bf K}$ phonon (Raman D band) in monolayer graphene, as a function of the charge doping. A detailed DFT study on the electron-phonon…

材料科学 · 物理学 2007-05-23 Srijan Kumar Saha , U. V. Waghmare , H. R. Krishnamurthy , A. K. Sood

The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of…

We present a joint theoretical and experimental investigation of charge doping and electronic potential landscapes in hybrid structures composed of graphene and semiconducting single layer MoS2. From first-principles simulations we find…

介观与纳米尺度物理 · 物理学 2013-12-23 B. Sachs , L. Britnell , T. O. Wehling , A. Eckmann , R. Jalil , B. D. Belle , A. I. Lichtenstein , M. I. Katsnelson , K. S. Novoselov

We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is accurately determined from dual-gated Raman measurements,…

介观与纳米尺度物理 · 物理学 2016-08-08 Guillaume Froehlicher , Stéphane Berciaud

We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths and intensities of the…

介观与纳米尺度物理 · 物理学 2011-07-01 S. Heydrich , M. Hirmer , C. Preis , T. Korn , J. Eroms , D. Weiss , C. Schüller

The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of $1-20\times10^3$ cm$^2$/V sec. Comparing the experimental data with the theoretical transport…

介观与纳米尺度物理 · 物理学 2008-01-02 Y. -W. Tan , Y. Zhang , K. Bolotin , Y. Zhao , S. Adam , E. H. Hwang , S. Das Sarma , H. L. Stormer , P. Kim

Mechanical properties of graphene prepared by chemical vapor deposition (CVD) are not easily comparable to the properties of nearly perfect graphene prepared by mechanical cleavage. In this work, we attempt to investigate the mechanical…

The problem of electrostatic screening of a charged line by undoped or weakly doped graphene is treated beyond the linear-response theory. The induced electron density is found to be approximately doping independent, n(x)~(log x)^2/x^2, at…

介观与纳米尺度物理 · 物理学 2015-06-24 Bor-Yuan Jiang , Michael M. Fogler

We uncover the interlayer shear mode of multi-layer graphene samples, ranging from bilayer-graphene (BLG) to bulk graphite, and show that the corresponding Raman peak measures the interlayer coupling. This peak scales from~43cm-1 in bulk…

介观与纳米尺度物理 · 物理学 2015-05-28 P. H. Tan , W. P. Han , W. J. Zhao , Z. H. Wu , K. Chang , H. Wang , Y. F. Wang , N. Bonini , N. Marzari , G. Savini , A. Lombardo , A. C. Ferrari

In this note, we report a Raman spectroscopy study of annealing-induced effects on graphene samples prepared by the microexfoliation method. It was shown that randomly located adhesive residues often contaminate nearby graphene sheets…

材料科学 · 物理学 2011-04-19 Jieun Song , Taeg Yeoung Ko , Sunmin Ryu

Bottom-up approaches allow the production of ultra-narrow and atomically precise graphene nanoribbons (GNRs), with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab-initio…

The Raman peak position and linewidth provide insight into phonon anharmonicity and electron-phonon interactions (EPI) in materials. For monolayer graphene, prior first-principles calculations have yielded decreasing linewidth with…

材料科学 · 物理学 2022-01-27 Zherui Han , Xiaolong Yang , Sean E. Sullivan , Tianli Feng , Li Shi , Wu Li , Xiulin Ruan

The effect of grain boundaries and wrinkles on the electrical properties of polycrystalline graphene is pronounced. Here we investigate the stitching between grains of polycrystalline graphene, specifically, overlapping of layers at the…

材料科学 · 物理学 2014-06-09 Rahul Rao , Neal Pierce , Avetik R. Harutyunyan

Through a combination of monitoring the Raman spectral characteristics of 2D materials grown on copper catalyst layers, and wafer scale automated detection of the fraction of transferred material, we reproducibly achieve transfers with over…

An efficient route to synthesize macroscopic amounts of graphene is highly desired and a bulk characterization of such samples, in terms of the number of layers, is equally important. We present a Raman spectroscopy-based method to…

We report a study of graphene and graphene field effect devices after exposure to a series of short pulses of oxygen plasma. We present data from Raman spectroscopy, back-gated field-effect and magneto-transport measurements. The intensity…

介观与纳米尺度物理 · 物理学 2011-02-15 Isaac Childres , Luis A. Jauregui , Jifa Tian , Yong P. Chen

Van der Waals single-layer materials are characterized by an inherent extremely low bending rigidity and therefore are prone to nanoscale structural modifications due to substrate interactions. Such interactions can induce excess charge…