(Bi1-xInx)2Se3纳米器件中拓扑相变诱导的三轴矢量磁电阻
应用物理
2018-02-28 v1 介观与纳米尺度物理
材料科学
摘要
我们报道了在x = 0.08组分的非磁性(Bi1-xInx)2Se3纳米器件中三轴矢量磁电阻(MR)的研究。我们展示了高达室温的哑铃形面内负磁电阻以及较大的面外正磁电阻。在2 K时，三个方向的磁电阻之比约为-3% : -1% : 225%。通过厚度和组分依赖的磁输运测量，我们表明面内负磁电阻源于拓扑临界点附近拓扑相变增强的表面间耦合。我们的器件显示了室温自旋电子学应用的巨大潜力，例如矢量磁传感器。
引用
@article{arxiv.1801.01224,
title = {Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices},
author = {Minhao Zhang and Huaiqiang Wang and Kejun Mu and Pengdong Wang and Wei Niu and Shuai Zhang and Guiling Xiao and Yequan Chen and Tong Tong and Dongzhi Fu and Xuefeng Wang and Haijun Zhang and Fengqi Song and Feng Miao and Zhe Sun and Zhengcai Xia and Xinran Wang and Yongbing Xu and Baigeng Wang and Dingyu Xing and Rong Zhang},
journal= {arXiv preprint arXiv:1801.01224},
year = {2018}
}
备注
23 pages, 12 figures