Simple-layered high mobility field effect heterostructured two-dimensional electron device
介观与纳米尺度物理
2007-05-23 v1 材料科学
摘要
We present a two-dimensional electron heterostructure field effect device of simplistic design and ease of fabrication that displays high mobility electron transport. This is accomplished using a high efficacy contacting scheme and simple metallic overlapping gate, obviating dopant layers. The resultant devices demonstrate adjustable electron densities and mobilities larger than 8x106 cm2/V-sec at the highest densities of 2.4x1011/cm2. This device type provides an experimental avenue for studying electron correlations and may answer demands for routine fabrication of practical HEMTs.
引用
@article{arxiv.cond-mat/0703718,
title = {Simple-layered high mobility field effect heterostructured two-dimensional electron device},
author = {R. L. Willett and L. N. Pfeiffer and K. W. West},
journal= {arXiv preprint arXiv:cond-mat/0703718},
year = {2007}
}