Silicon nanostructures embedded in superconductor shells
超导电性
2007-05-23 v3 介观与纳米尺度物理
摘要
We present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron of the n - type Si (100) surface. These Si - based nanostructures represent the p - type ultra-narrow self - assembled silicon quantum wells confined by the delta - barriers heavily with boron. The resistivity, thermo - emf and magnetic susceptibility studies show that the high temperature superconductivity observed seems to result from the single - hole tunnelling into the negative - U boron centres at the silicon quantum well - delta - barier interfaces.
引用
@article{arxiv.cond-mat/0510726,
title = {Silicon nanostructures embedded in superconductor shells},
author = {Nikolay T. Bagraev and Wolfgang Gehlhoff and Leonid E. Klyachkin and Anna M. Malyarenko and Vladimir V. Romanov and Serguey A. Rykov},
journal= {arXiv preprint arXiv:cond-mat/0510726},
year = {2007}
}
备注
4 pages, 5 figures