We present the first findings of the circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by {\delta}-barriers heavily doped with boron. The CPEL dependences on the forward current and lateral electric field show the circularly polarized light emission which appears to be caused by the exciton recombination through the negative-U dipole boron centers at the Si-QW - {\delta}-barriers interface with the assistance of phosphorus donors.
@article{arxiv.1104.4975,
title = {Polarized electroluminescence from silicon nanostructures},
author = {Nikolay Bagraev and Eduard Danilovsky and Dmitrii Gets and Leonid Klyachkin and Andrey Kudryavtsev and Roman Kuzmin and Anna Malyarenko and Vladimir Mashkov},
journal= {arXiv preprint arXiv:1104.4975},
year = {2011}
}