The circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by {\delta}-barriers heavily doped with boron, 5 10^21 cm^-3, is under study as a function of temperature and excitation levels. The CPEL dependences on the forward current and temperature show the circularly polarized light emission which appears to be caused by the exciton recombination through the negative-U dipole boron centers at the Si-QW {\delta}-barriers interface.
@article{arxiv.1104.4915,
title = {Circularly polarized electroluminescence from silicon nanostructures heavily doped with boron},
author = {N. T. Bagraev and L. E. Klyachkin and R. V. Kuzmin and A. M. Malyarenko},
journal= {arXiv preprint arXiv:1104.4915},
year = {2015}
}