Polarization dependent spike formation on black silicon via ultrafast laser structuring
Abstract
A comparative experimental and theoretical investigation is presented that centres on the effects of structuring black silicon surfaces with linearly, circularly and azimuthally polarized laser pulses under SF6 ambient atmosphere. It is shown that the asymmetric elliptical micro-cone formations induced by linearly polarized beams result in variable light absorption due to their spatial asymmetry. By contrast, the use of azimuthally polarized beams leads to an omni-directionality of the elliptical cone orientation which is dependent on the local electric field during laser scanning. The locally variant electric field state that is azimuthally polarized leads to a selective conical orientation for the induced structures. The omni-directional conical distribution induced by azimuthal polarization produces similar, angle-independent absorption in the visible spectrum with the symmetrical conical structures that could only be realized with circularly polarized beams.
Cite
@article{arxiv.2010.14383,
title = {Polarization dependent spike formation on black silicon via ultrafast laser structuring},
author = {Evangelos Skoulas and Alexandros Mimidis and Ioanna Demeridou and George D. Tsibidis and Emmanuel Stratakis},
journal= {arXiv preprint arXiv:2010.14383},
year = {2020}
}