We present a theory that describes the appearance of circular polarization of the photoluminescence (PL) in ferromagnet-semiconductor hybrid heterostructures due to spin-dependent tunneling of photoexcited carriers from a quantum well into a magnetic layer. The theory succeeds in explaining the experimental data on time-resolved PL for heterostructures consisting of InGaAs-based quantum well (QW) and a spatially separated Mn δ-layer. We show that the circular polarization of the PL originates from dynamic spin polarization of electrons due to spin-dependent leakage from the QW onto Mn donor states split by the exchange field of the ferromagnetic Mn delta-layer.
@article{arxiv.1507.00585,
title = {Spin-dependent tunneling in semiconductor heterostructures with a magnetic layer},
author = {Igor Rozhansky and Konstantin Denisov and Nikita Averkiev and Erkki Lahderanta},
journal= {arXiv preprint arXiv:1507.00585},
year = {2015}
}