Interaction between Mn Ions and Free Carriers in Quantum Wells with Asymmetrical Semimagnetic Barriers

D. M. Zayachuk; T. Slobodskyy; G. V. Astakhov; C. Gouldınst; G. Schmidt; W. Ossau; L. W. Molenkamp

doi:10.1209/0295-5075/91/67007

Interaction between Mn Ions and Free Carriers in Quantum Wells with Asymmetrical Semimagnetic Barriers

Materials Science 2016-08-14 v1

Authors: D. M. Zayachuk , T. Slobodskyy , G. V. Astakhov , C. Gouldınst , G. Schmidt , W. Ossau , L. W. Molenkamp

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Abstract

Investigations of photoluminescence (PL) in the magnetic field of quantum structures based on the ZnSe quantum well with asymmetrical ZnBeMnSe and ZnBeSe barriers reveal that the introduction of Be into semimagnetic ZnMnSe causes a decrease of the exchange integrals for conductive and valence bands as well as the forming of a complex based on Mn, degeneration of an energy level of which with the energy levels of the V band of ZnBeMnSe or ZnSe results in spin-flip electron transitions.

Keywords

quantum wells semimagnetic barriers manganese ions free carriers photoluminescence exchange integrals spin-flip transitions

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@article{arxiv.1009.1490,
  title  = {Interaction between Mn Ions and Free Carriers in Quantum Wells with Asymmetrical Semimagnetic Barriers},
  author = {D. M. Zayachuk and T. Slobodskyy and G. V. Astakhov and C. Gouldınst and G. Schmidt and W. Ossau and L. W. Molenkamp},
  journal= {arXiv preprint arXiv:1009.1490},
  year   = {2016}
}

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Accepted to Europhys. Lett

Interaction between Mn Ions and Free Carriers in Quantum Wells with Asymmetrical Semimagnetic Barriers

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