We consider the energy spectrum of the planar quantum well which consisted of two ribbons of narrow-gap semiconductors and a graphene ribbon between ones. It is shown that the gapless mode appears only in case of inverted narrow-gap semiconductors. Spin splitting of the energy spectrum for a nonsymmetric quantum well is calculated taking into account a specificity of graphene. We investigate interface states and optical transitions. It is shown that the optical transitions are possible only with a conservation of a parity.
@article{arxiv.0808.3388,
title = {Quantum Well Based on Graphene and Narrow-Gap Semiconductors},
author = {P. V. Ratnikov and A. P. Silin},
journal= {arXiv preprint arXiv:0808.3388},
year = {2015}
}