We investigate a planar heterostructure composed of two graphene films separated by a narrow-gap semiconductor ribbon. We show that there is no the Klein paradox when the Dirac points of the Brillouin zone of graphene are in a band gap of a narrow-gap semiconductor. There is the energy range depending on an angle of incidence, in which the above-barrier damped solution exists. Therefore, this heterostructure is a "filter" transmitting particles in a certain range of angles of incidence upon a potential barrier. We discuss the possibility of an application of this heterostructure as a "switch".
@article{arxiv.0808.1981,
title = {Planar Heterostructure Graphene -- Narrow-Gap Semiconductor -- Graphene},
author = {P. V. Ratnikov and A. P. Silin},
journal= {arXiv preprint arXiv:0808.1981},
year = {2015}
}