The graphene is a native two-dimensional crystal material consisting of a single sheet of carbon atoms. In this unique one-atom-thick material, the electron transport is ballistic and is described by a quantum relativistic-like Dirac equation rather than by the Schrodinger equation. As a result, a graphene barrier behaves very differently compared to a common semiconductor barrier. We show that a single graphene barrier acts as a switch with a very high on-off ratio and displays a significant differential negative resistance, which promotes graphene as a key material in nanoelectronics.
Cite
@article{arxiv.quant-ph/0701011,
title = {Negative Differential Resistance of Electrons in Graphene Barrier},
author = {Daniela Dragoman and Mircea Dragoman},
journal= {arXiv preprint arXiv:quant-ph/0701011},
year = {2007}
}