Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken, by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion. Here, we introduce a novel bilayer graphene heterostructure, where single-layer graphene is placed on top of another layer of graphene with a regular lattice of antidots. We dub this class of graphene systems GOAL: graphene on graphene antidot lattice. By varying the structure geometry, band structure engineering can be performed to obtain linearly dispersing bands (with a high concomitant mobility), which nevertheless can be made gapped with the perpendicular field. We analyze the electronic structure and transport properties of various types of GOALs, and draw general conclusions about their properties to aid their design in experiments.
@article{arxiv.1410.5196,
title = {Graphene on graphene antidot lattices: Electronic and transport properties},
author = {Søren Schou Gregersen and Jesper Goor Pedersen and Stephen R. Power and Antti-Pekka Jauho},
journal= {arXiv preprint arXiv:1410.5196},
year = {2015}
}