We propose a new method to use gapped graphene as barrier to confine electrons in gapless graphene and form a good quantum dot, which can be realized on an oxygen-terminated SiO2 substrate partly H-passivated. In particular, we use ferromagnetic insulators deposited on top of barrier which give rise to a spin related energy spectrum and transport properties. Compared to the complexity of etched quantum dots in graphene, the setup suggested here is a promising candidate for practical applications.
@article{arxiv.0910.4708,
title = {Substrate Modulated Graphene Quantum Dot},
author = {Qiong Ma and Zhi-Rong Lin and Tao Tu and Guang-Can Guo and Guo-Ping Guo},
journal= {arXiv preprint arXiv:0910.4708},
year = {2009}
}