Semiconductor structures using ferromagnetic semiconductors as spin injectors are promising systems for future spintronic devices. Here, we present combined photoluminescence (PL) and time-resolved magneto-optical experiments of a nominally nonmagnetic quantum well(QW) separated by a thin barrier from a ferromagnetic Ga(Mn)As layer. Due to the partial quenching of the PL, we conclude that there is a significant Mn backdiffusion into the QW. Moreover, from the time-resolved measurements, we infer that the Mn leads to n-type doping within the QW, and, in addition, strongly increases the electron spin dephasing time.
@article{arxiv.0809.3654,
title = {Manganese-diffusion-induced n-doping in semiconductor structures containing Ga(Mn)As layers},
author = {T. Korn and R. Schulz and S. Fehringer and U. Wurstbauer and D. Schuh and W. Wegscheider and M. W. Wu and C. Schüller},
journal= {arXiv preprint arXiv:0809.3654},
year = {2008}
}