Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in the GaMnAs/GaAs/InGaAs quantum well (QW) hybrid structure with a few nanometer thick GaAs barrier is developed. It is demonstrated that a combination of spin electromotive force measurements and photoluminescence detection provides a powerful tool for studying the properties of such hybrid structures and allows to resolve the dynamic FM proximity effect on a nanometer scale. The method can be generalized on various systems including rapidly developing 2D van der Waals materials.
@article{arxiv.2304.08195,
title = {Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure},
author = {Igor V. Rozhansky and Ina V. Kalitukha and Grigorii S. Dimitriev and Olga S. Ken and Mikhail V. Dorokhin and Boris N. Zvonkov and Dmitri S. Arteev and Nikita S. Averkiev and Vladimir L. Korenev},
journal= {arXiv preprint arXiv:2304.08195},
year = {2023}
}