Subband structure of II-VI modulation-doped magnetic quantum wells
Abstract
Here we investigate the spin-dependent subband structure of newly-developed Mn-based modulation-doped quantum wells. In the presence of an external magnetic field, the s-d exchange coupling between carriers and localized d electrons of the Mn impurities gives rise to large spin splittings resulting in a magnetic-field dependent subband structure. Within the framework of the effective-mass approximation, we self-consistently calculate the subband structure at zero temperature using Density Functional Theory (DFT) with a Local Spin Density Approximation (LSDA). We present results for the magnetic-field dependence of the subband structure of shallow ZnSe/ZnCdMnSe modulation doped quantum wells. Our results show a significant contribution to the self-consistent potential due to the exchange-correlation term. These calculations are the first step in the study of a variety of interesting spin-dependent phenomena, e.g., spin-resolved transport and many-body effects in polarized two-dimensional electron gases.
Keywords
Cite
@article{arxiv.cond-mat/0112263,
title = {Subband structure of II-VI modulation-doped magnetic quantum wells},
author = {Henrique J. P. Freire and J. Carlos Egues},
journal= {arXiv preprint arXiv:cond-mat/0112263},
year = {2015}
}
Comments
3 pages, 3 postscript figures, submitted to the proceedings of the 10th Brazilian Workshop on Semiconductor Physics (BWSP10)