Spin-polarized tunneling in ferromagnetic double barrier junctions
Disordered Systems and Neural Networks
2009-11-07 v1
Abstract
Spin-polarized tunneling in FMS/M/FMS double tunnel junctions where FMSs are ferromagnetic semiconductor layers and M is a metal spacer is studied theoretically within the single-site coherent potential approximation (CPA). The exchange interaction between a conduction electron and localized moment of the magnetic ion is treated in the framework of the s-f model. The spin polarization in the FMS layers is observed to oscillates as a function of the number of atomic planes in the spacer layer. Amplitude of these oscillations decreases with increasing the exchange interaction in FMS layers.
Cite
@article{arxiv.cond-mat/0112464,
title = {Spin-polarized tunneling in ferromagnetic double barrier junctions},
author = {Alireza Saffarzadeh},
journal= {arXiv preprint arXiv:cond-mat/0112464},
year = {2009}
}
Comments
10 pages, LaTex, 4 PS figures