电子在弯曲硅晶体中沟道辐射的发射
加速器物理
2014-03-25 v1
摘要
本文报告了直硅晶体和均匀弯曲硅晶体中电子沟道效应和发射光谱的数值模拟结果。利用 MBN Explorer 软件包 [2,3] 新开发的模块 [1] 计算了入射粒子轨迹。研究了入射粒子能量为 855 MeV 时沿 Si(110) 晶面的电子沟道效应。
关键词
引用
@article{arxiv.1403.6040,
title = {Radiation Emission by Electrons Channeling in Bent Silicon Crystals},
author = {R G Polozkov and V K Ivanov and G B Sushko and Andrey V Korol and Andrey V Solov'yov},
journal= {arXiv preprint arXiv:1403.6040},
year = {2014}
}
备注
9 pages, 7 figures; submitted to European Physical Journal D. arXiv admin note: text overlap with arXiv:1307.6787