相关论文: Radiation Emission by Electrons Channeling in Bent…
Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. The projectile trajectories are computed using the newly…
We report on the results of theoretical simulations of the electron channeling in a bent silicon crystal. The dynamics of ultra-relativistic electrons in the crystal is computed using the newly developed part [1] of the MBN Explorer package…
The method of relativistic molecular dynamics is applied for accurate computational modelling and numerical analysis of the channelling phenomena for 855 MeV electrons in bent oriented silicon (111) crystal. Special attention is devoted to…
Planar channeling of 855 MeV electrons and positrons in straight and bent tungsten (110) crystal is simulated by means of the \MBNExplorer software package. The results of simulations for a broad range of bending radii are analyzed in terms…
In this paper we present the results of a systematic numerical analysis of the channeling properties of electrons and positrons in oriented straight and periodically bent diamond(110) crystals. We analyse dependence of the intensity of the…
A comprehensive numerical investigation has been conducted on the angular distribution and spectrum of radiation emitted by 855 MeV electron and positron beams while traversing a 'quasi-mosaic' bent silicon (111) crystal. This interaction…
A newly developed code, implemented as a part of the \MBNExplorer package \cite{MBN_ExplorerPaper,MBN_ExplorerSite} to simulate trajectories of an ultra-relativistic projectile in a crystalline medium, is presented. The motion of a…
A periodically bent Si crystal is shown to efficiently serve for producing highly monochromatic radiation in a gamma-ray energy spectral range. A short-period small-amplitude bending yields narrow undulator-type spectral peaks in radiation…
Channeling properties and radiation spectra are studied on the grounds of numerical simulations for the 855 MeV electrons in a periodically bent diamond crystal. The bent crystalline profiles are shown to enhance the re-channeling of the…
Computational modelling of passage of high-energy electrons through crystalline media is carried out by means of the relativistic molecular dynamics. The results obtained are compared with the experimental data for 855 MeV electron beam…
Results obtained with a new Monte-Carlo code ChaS for channeling of 855 MeV electrons along the crystallographic plane (110) in a bent silicon crystal are presented. The dependence of the dechanneling length and the asymptotic acceptance of…
A new Monte Carlo code for the simulation of the channeling of ultrarelativistic charged projectiles in single crystals is presented. A detailed description of the underlying physical model and the computation algorithm is given. First…
Channeling and radiation are studied for the relativistic electrons and positrons passing through a Si crystal periodically bent with a small amplitude and a short period. Comprehensive analysis of the channeling process for various bending…
We present an investigation into beam steering and radiation emission by sub-GeV electrons traversing bent silicon crystals. Using 855, 600, and 300~MeV electron beams at the Mainz Microtron (MAMI), we explored orientational coherent…
The results of numerical simulation of the channeling of ultra-relativistic 270 MeV electrons and positrons in a diamond crystal are presented. Using the MBN Explorer package, the trajectories of the have been determined of the particles…
Methodology is developed that incorporates the radiation reaction force into the relativistic molecular dynamics framework implemented in the MBN Explorer software package. The force leads to a gradual decrease in the projectile's energy E…
Monte Carlo simulations have been performed for 855 MeV and 6.3 GeV electrons channeling in silicon single crystals at circular bent (111) planes. The aim was to identify critical experimental parameters which effect the volume-deflection…
We analyze numerically the radiation and channeling properties of ultrarelativistic electrons and positrons propagating through a periodically bent diamond crystal grown on a straight single-crystal diamond substrate. Such systems can be…
When a high-energy electrons move in a crystal along one of the crystallographic planes the phenomenon of planar channeling is possible, in which the particles move in channels formed by the continuous potential of crystalline planes. Such…
Simulations of electron and positron channelling in a crystalline undulator with a small amplitude and a short period (A Kostyuk, Phys. Rev. Lett. 110 (2013) 115503) were repeated by V G Bezchastnov, A V Korol and A V Solov'yov (J. Phys. B:…