β-Ga2O3中的本征缺陷缔合实现室温p型导电
材料科学
2023-06-05 v1
摘要
超宽禁带半导体β-Ga2O3的室温空穴导电是基于该氧化物开发下一代电子和光电子器件的先决条件。本工作中，通过金属有机化学气相沉积（MOCVD）在r面蓝宝石衬底上生长的高质量p型β-Ga2O3薄膜在室温下呈现Rho = 50000 Ohm.cm电阻率。确定导电活化能低至Ea2=170 meV，其与氧-镓本征受主缺陷络合物相关。进一步利用阳离子（Zn）掺杂，Ga2O3:Zn薄膜的导电率显著提高了三个数量级，展现出长期稳定的室温空穴导电，其导电活化能约为86 meV。
引用
@article{arxiv.2306.01115,
title = {Native defect association in beta-Ga2O3 enables room-temperature p-type conductivity},
author = {Zeyu Chi and Corinne Sartel and Yunlin Zheng and Sushrut Modak and Leonid Chernyak and Christian M Schaefer and Jessica Padilla and Jose Santiso and Arie Ruzin and Anne-Marie Goncalves and Jurgen von Bardeleben and Gerard Guillot and Yves Dumont and Amador Perez-Tomas and Ekaterine Chikoidze},
journal= {arXiv preprint arXiv:2306.01115},
year = {2023}
}
备注
21pages; 9figures