Mobility gap in intermediate valent TmSe
强关联电子
2009-11-11 v1
摘要
The infrared optical conductivity of intermediate valence compound TmSe reveals clear signatures for hybridization of light - and heavy f-electronic states with m* ~ 1.6 m_0 and m* ~ 16 m_0, respectively. At moderate and high temperatures, the metal-like character of the heavy carriers dominate the low-frequency response while at low temperatures (T_N < T < 100 K) a gap-like feature is observed in the conductivity spectra below 10 meV which is assigned to be a mobility gap due to localization of electrons on local Kondo singlets, rather than a hybridization gap in the density of states.
引用
@article{arxiv.cond-mat/0509652,
title = {Mobility gap in intermediate valent TmSe},
author = {M. Dumm and B. Gorshunov and M. Dressel and T. Matsumura},
journal= {arXiv preprint arXiv:cond-mat/0509652},
year = {2009}
}