InGaN/GaN纳米盘比量子阱好多少？——振荡器强度增强和光学性质变化
介观与纳米尺度物理
2015-06-17 v3
摘要
我们展示了当GaN纳米柱中的InGaN纳米盘直径从几微米减小到小于40纳米（对应量子点极限）时，激子振荡器强度增强超过100倍。这种增强源于直径小于100纳米的纳米盘中显著的应变弛豫。同时，由于小纳米盘中光子态局域密度的强烈降低，辐射衰减率仅提高了10倍。通过工程化光子态局域密度（例如添加介电涂层），可以进一步提高辐射衰减率。
引用
@article{arxiv.1309.6264,
title = {How much better are InGaN/GaN nanodisks than quantum wells - oscillator strength enhancement and changes in optical properties},
author = {Lei Zhang and Leung-Kway Lee and Chu-Hsiang Teng and Tyler A. Hill and Pei-Cheng Ku and Hui Deng},
journal= {arXiv preprint arXiv:1309.6264},
year = {2015}
}
备注
Accepted by Applied Physics Letters, 3 figures, 5 pages, Supplementary Materials available in the source package