Frohlich mass in GaAs-based structures
介观与纳米尺度物理
2009-11-11 v1
摘要
The Frohlich interaction is one of the main electron-phonon intrinsic interactions in polar materials originating from the coupling of one itinerant electron with the macroscopic electric field generated by any longitudinal optical (LO) phonon. Infra-red magneto-absorption measurements of doped GaAs quantum wells structures have been carried out in order to test the concept of Frohlich interaction and polaron mass in such systems. These new experimental results lead to question the validity of this concept in a real system.
引用
@article{arxiv.cond-mat/0601438,
title = {Frohlich mass in GaAs-based structures},
author = {C. Faugeras and G. Martinez and A. Riedel and R. Hey and K-J Friedland and Y. Bychkov},
journal= {arXiv preprint arXiv:cond-mat/0601438},
year = {2009}
}
备注
4 pages, 3 figures