6H-SiC(000-1) 上的少层石墨烯：一项 STM 研究
材料科学
2008-04-23 v1
摘要
我们通过扫描隧道显微镜 (STM) 分析了在 6H-SiC 的 C 终止面上生长的由少数 (3-5) 层石墨烯组成的薄膜，以确定该材料中报道的方位角无序的本质。我们观察到了超结构，并将其解释为由于连续层之间的错位角而产生的莫尔条纹 (Moir\'e patterns)。堆垛层错的存在预计会导致多层样品的电子特性类似于单层石墨烯。我们的结果表明，这种表观的层间电子解耦可以在 STM 数据中显现出来。
引用
@article{arxiv.0801.1188,
title = {Few layers graphene on 6H-SiC(000-1): an STM study},
author = {François Varchon and Pierre Mallet and Laurence Magaud and Jean-Yves Veuillen},
journal= {arXiv preprint arXiv:0801.1188},
year = {2008}
}
备注
20 pages
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