SiC衬底上的外延石墨烯生长
材料科学
2012-08-27 v1 介观与纳米尺度物理
摘要
我们利用商用化学气相沉积反应器，在4H-和6H-SiC衬底上通过真空热解吸工艺成功制备了外延石墨烯(EG)。描述了生长条件与EG形貌和电学性质的相关性。Si面样品上EG的拉曼光谱以单层厚度为主。该方法用于在50毫米SiC晶圆上生长EG，随后将其制备成场效应晶体管，其最大振荡频率(fmax)达到14 GHz。
引用
@article{arxiv.0907.5031,
title = {Epitaxial Graphene Growth on SiC Wafers},
author = {D. Kurt Gaskill and Glenn G. Jernigan and Paul M. Campbell and Joseph L. Tedesco and James C. Culbertson and Brenda L. VanMil and Rachael L. Myers-Ward and Charles R. Eddy, and Jeong Moon and D. Curtis and M. Hu and D. Wong and C. McGuire and Joshua A. Robinson and Mark A. Fanton and Joseph P. Stitt and Thomas Stitt and David Snyder and Xiaojun Weng and Eric Frantz},
journal= {arXiv preprint arXiv:0907.5031},
year = {2012}
}
备注
215th Meeting of the Electrochemical Society, 8 pages, 8 figures