Electron g-factor Engineering in III-V Semiconductors for Quantum Communications
量子物理
2007-05-23 v2
摘要
An entanglement-preserving photo-detector converts photon polarization to electron spin. Up and down spin must respond equally to oppositely polarized photons, creating a requirement for degenerate spin energies, ge=0 for electrons. We present a plot of ge-factor versus lattice constant, analogous to bandgap versus lattice constant, that can be used for g-factor engineering of III-V alloys and quantum wells
引用
@article{arxiv.quant-ph/0102056,
title = {Electron g-factor Engineering in III-V Semiconductors for Quantum Communications},
author = {Hideo Kosaka and Andrey A. Kiselev and Filipp A. Baron and Ki Wook Kim and Eli Yablonovitch},
journal= {arXiv preprint arXiv:quant-ph/0102056},
year = {2007}
}
备注
2 pages, 1 figure, v2:caption style was corrected