相关论文: Electron g-factor Engineering in III-V Semiconduct…
We describe how quantum information may be transferred from photon polarization to electron spin in a semiconductor device. The transfer of quantum information relies on selection rules for optical transitions, such that two superposed…
According to a prevailing opinion, the electron g-factor ge = 2 is exclusively a quantum feature. Here we demonstrate it could be explained classically only in relativistic terms. The electron is treated as an extended, continuous, but…
By means of CW polarization-resolved photoluminescence spectroscopy we demonstrate the sign inversion of $g_z$-component of 2D electron g-factor with narrowing of a hosting GaAs/Al$_{0.33}$Ga$_{0.67}$As quantum well (QW). The energy…
We demonstrate negative polarization created by light-hole exciton excitation in g-factor engineered GaAs quantum wells measured by time-resolved Kerr rotation and polarization-resolved photoluminescence. This negative polarization is a…
A single photoelectron can be trapped and its photoelectric charge detected by a source/drain channel in a transistor. Such a transistor photodetector can be useful for flagging the safe arrival of a photon in a quantum repeater. The…
The knowledge of electron g factor is essential for spin manipulation in the field of spintronics and quantum computing. While there exist technical difficulties in determining the sign of g factor in semiconductors by the established…
The knowledge of electron and hole g-factors, their control and engineering are key for the usage of the spin degree of freedom for information processing in solid state systems. The electronic g-factor will be materials dependent, the…
We present an entanglement concentration protocol for electrons based on their spins and their charges. The combination of an electronic polarizing beam splitter and a charge detector functions as a parity check device for two electrons,…
We theoretically model the spin-orbit interaction in silicon quantum dot devices, relevant for quantum computation and spintronics. Our model is based on a modified effective mass approach with spin-valley boundary conditions, derived from…
We study the interplay of electron and photon spin in non-reciprocal materials. Traditionally, the primary mechanism to design non-reciprocal photonic devices has been magnetic fields in conjunction with magnetic oxides, such as iron…
We show that the electron and hole Lande g factors in self-assembled III-V quantum dots have a rich structure intermediate between that expected for paramagnetic atomic impurities and for bulk semiconductors. Strain, dot geometry, and…
g-factor tuning of electrons in quantum dots is studied as function of in-plane and perpendicular magnetic fields for different confinements. Rashba and Dresselhaus effects are considered, and comparison is made between wide- and narrow-gap…
In moderately strong magnetic fields, the difference in Lande g-factors in each of the dots of a coupled double quantum dot device may induce oscillations between singlet and triplet states of the entangled electron pair and lead to a…
Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually…
The present work theoretically investigates the probability of generation of entangled electron-photon pair in high-energy Compton scattering of unpolarized electrons and photons due to scattering-channel-exchange mechanism. The study…
We theoretically investigated the mechanism of quantum entanglement between the spin of photoelectrons and linear polarization of emitted X-ray photons in the 3$d\rightarrow\ $2$p$ XEPECS process for $\rm Ti_{2}O_{3}$. In the calculation,…
Positive signs of the effective g-factors for free electrons in the conduction band and electrons localized on deep paramagnetic centers have been measured in nitrogen dilute alloy GaAs{0.979}N{0.021} at room temperature. The g-factor signs…
We present a magneto-photoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong…
We optically generate electron spins in semiconductors and apply an external magnetic field perpendicularly to them. Time-resolved photoluminescence measurements, pumped with a circularly polarized light, are performed to study the spin…
In a recent publication, Pfeffer and Zawadzki [cond-mat/0607150; Phys. Rev. B 74, 115309 (2006)] attempted a calculation of electron g factor in III-V heterostructures. The authors emphasize that their outcome is in strong discrepancy with…