相关论文: Electron g-factor Engineering in III-V Semiconduct…
The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum…
We propose that phonons coupled to electrons play an important role in both the fundamental phenomenology of electron spin resonance as well as the interpretation of such measurements. By including spin-dependent electron-phonon…
We analyze and compare three different schemes that can be used to generate entanglement between spin qubits in optically-active single solid-state quantum systems. Each scheme is based on first generating entanglement between the spin…
The effective g-factor ($g^{*}$) of a dilute interacting two-dimensional electron system is expected to increase with respect to its bare value as the density is lowered, and to eventually diverge as the system makes a transition to a…
Self-assembled InGaAs/GaAs quantum dots (QDs) are of particular importance for the deterministic generation of spin-photon entanglement. One promising scheme relies on the Larmor precession of a spin in a transverse magnetic field, which is…
Spintronics, which aims at exploiting the spin degree of freedom of carriers inside electronic devices, has a huge potential for quantum computation and dissipationless interconnects. Ideally, spin currents in spintronic devices should be…
We demonstrate polarization-entanglement for non-degenerate and degenerate photon-pairs generated through Kerr-nonlinearity in a nano-scale silicon-on-insulator(SOI) waveguide. We use a compact counter propagating configuration to create…
We study biexcitonic states in two tunnel-coupled semiconductor quantum dots and show that such systems provide the possibility to produce polarization- entangled photons or spin-entangled electrons that are spatially separated at…
This paper summarizes the state of the art of photocathode based on III-V semiconductors for spin polarized electron beam production. The limitations preventing this class of material to provide the long term reliability at the highest…
For photon-spin conversion, the Ge hole system in a strained GeSi/Ge quantum well with a diamond structure has attracted significant attention because of the potential for a high-performance spin qubit and optical transitions ranging in…
The cross section for polarized and unpolarized electron-proton scattering is calculated taking into account radiative corrections in leading and next-to leading logarithmic approximation. The expression of the cross section is formally…
We demonstrate that the superposition of light polarization states is coherently transferred to electron spins in a semiconductor quantum well. By using time-resolved Kerr rotation we observe the initial phase of Larmor precession of…
It is shown that the interaction of an electron beam with polarized electromagnetic wave of laser photons propagating in the same direction in a short interaction region results in significant transversal deflection of the electrons which…
We propose a novel approach for efficient generation of entangled photons, based on Cooper-pair luminescence in semiconductors, which does not require isolated emitters such as single atoms or quantum dots. We show that in bulk materials,…
Photoinduced circular dichroism experiments in an oblique magnetic field allow measurements of Larmor precession frequencies, and so give a precise determination of the electron Lande g factor and its anisotropy in self-assembled InAs/GaAs…
I describe a proposal to construct a quantum information processor using ferroelectrically coupled Ge/Si quantum dots. The spin of single electrons form the fundamental qubits. Small (<10 nm diameter) Ge quantum dots are optically excited…
In this theoretical study we qualitatively and quantitatively investigate the electric dipole spin resonance (EDSR) in a single Si/SiGe quantum dot in the presence of a magnetic field gradient, e.g., produced by a ferromagnet. We model a…
The Land\'e or g-factors of charge carriers in solid state systems provide invaluable information about response of quantum states to external magnetic fields and are key ingredients in description of spin-dependent phenomena in…
The effective electron-electron interaction in the electron gas depends on both the density and spin local field factors. Variational Diagrammatic Quantum Monte Carlo calculations of the spin local field factor are reported and used to…
Calculations for two electrons in an elliptic quantum dot, using symmetry breaking at the unrestricted Hartree-Fock level and subsequent restoration of the broken parity via projection techniques, show that the electrons can localize and…