具有巨塞曼效应的稀磁半导体异质结构AlSb/InAs/ZnMnTe用于InAs中的二维电子
介观与纳米尺度物理
2011-04-06 v1
摘要
开发了一种生长具有InAs量子阱中二维电子气的稀磁半导体的新方法。该方法基于分子束外延生长具有III-V/II-VI界面的相干“混合”AlSb/InAs/(Zn,Mn)Te异质结构。通过测量微波辐射诱导的自旋极化电流，证明了由与Mn2+离子交换相互作用引起的InAs导带的巨塞曼分裂。
引用
@article{arxiv.1104.0854,
title = {Diluted magnetic semiconductor heterostructure AlSb/InAs/ZnMnTe with giant Zeeman effect for two dimensional electrons in InAs},
author = {Ya. V. Terent'ev and C. Zoth and V. V. Bel'kov and P. Olbrich and C. Drexler and V. Lechner and P. Lutz and A. N. Semenov and V. A. Solov'ev and I. V. Sedova and G. V. Klimko and T. A. Komissarova and S. V. Ivanov and S. D. Ganichev},
journal= {arXiv preprint arXiv:1104.0854},
year = {2011}
}
备注
4 pages and 3 figures