半导体量子阱带间激发下的圆光生伏特效应
凝聚态物理
2009-11-10 v1
摘要
我们在 GaAs 量子阱的带间激发下观察到了圆光生伏特效应 (CPGE)。测量了 CPGE 的光谱依赖性以及时间分辨光致发光的偏振度。一个理论模型考虑了导带和价带的自旋劈裂。
引用
@article{arxiv.cond-mat/0308420,
title = {Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells},
author = {V. V. Bel'kov and S. D. Ganichev and Petra Schneider and C. Back and M. Oestereich and J. Rudolph and D. Haegele and L. E. Golub and W. Wegscheider and W. Prettl},
journal= {arXiv preprint arXiv:cond-mat/0308420},
year = {2009}
}
备注
3 pages, 3 figures