由 Shubnikov-de Haas 与 de Haas-van Alphen 效应推导 Cd$_3$As$_2$ 的能带结构
材料科学
2017-09-19 v1
摘要
本文将 Rosenman 和 Doi 等人得到的 SdH 与 dHvA 周期以及回旋有效质量的实验值，与本文针对四方窄带隙半导体推导的理论预测值进行了比较。通过最小二乘拟合方法获得了能带参数值。研究确定 CdAs 具有类似于 HgTe 在拉伸应力下的反转能带结构。
引用
@article{arxiv.1709.05845,
title = {Band structure of Cd$_3$As$_2$ from Shubnikov - de Haas and de Haas - van Alphen effects},
author = {Jan Bodnar},
journal= {arXiv preprint arXiv:1709.05845},
year = {2017}
}
备注
The following paper on the band structure of Cd$_3$As$_2$ was published by Jan Bodnar in the Proceedings of the 3rd International Conference on the Physics of Narrow Gap Semiconductors (Warszawa 1977), p. 311. A few months after the conference Jan died suddenly of a heart attack at the age of 27. The paper appears without changes. Wlodek Zawadzki, [[email protected]]