SiC(0001)的大气压石墨化——通向晶圆级石墨烯层的途径
材料科学
2008-08-11 v1
摘要
我们研究了在氩气气氛而非真空中退火在SiC(0001)上生长的外延石墨烯薄膜。利用原子力显微镜和低能电子显微镜，我们观察到表面形貌和石墨烯畴尺寸显著改善。单层石墨烯薄膜的霍尔测量显示，室温下载流子迁移率约为1000 cm²/Vs，27K时约为2000 cm²/Vs。本文引入的生长过程为在技术可行的基础上合成石墨烯薄膜奠定了基础。
引用
@article{arxiv.0808.1222,
title = {Atmospheric pressure graphitization of SiC(0001)- A route towards wafer-size graphene layers},
author = {Konstantin V. Emtsev and Aaron Bostwick and Karsten Horn and Johannes Jobst and Gary L. Kellogg and Lothar Ley and Jessica L. McChesney and Taisuke Ohta and Sergey A. Reshanov and Eli Rotenberg and Andreas K. Schmid and Daniel Waldmann and Heiko B. Weber and Thomas Seyller},
journal= {arXiv preprint arXiv:0808.1222},
year = {2008}
}