A Monolithic Pixel Sensor in 0.15 micron Fully Depleted SOI Technology

Marco Battaglia; Dario Bisello; Devis Contarato; Peter Denes; Piero Giubilato; Lindsay Glesener; Chinh Vu

doi:10.1016/j.nima.2007.09.042

A Monolithic Pixel Sensor in 0.15 micron Fully Depleted SOI Technology

Instrumentation and Detectors 2008-11-26 v1

Authors: Marco Battaglia , Dario Bisello , Devis Contarato , Peter Denes , Piero Giubilato , Lindsay Glesener , Chinh Vu

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

This letter presents the design of a monolithic pixel sensor with 10x10 micron^2 pixels in OKI 0.15 micron fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1.35 GeV electron beam at the LBNL ALS.

Cite

@article{arxiv.0709.4218,
  title  = {A Monolithic Pixel Sensor in 0.15 micron Fully Depleted SOI Technology},
  author = {Marco Battaglia and Dario Bisello and Devis Contarato and Peter Denes and Piero Giubilato and Lindsay Glesener and Chinh Vu},
  journal= {arXiv preprint arXiv:0709.4218},
  year   = {2008}
}

Comments

4 pages, 5 figures, submitted to Nuclear Instruments and Methods A

Related papers

View all related →