We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5--10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3--40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achieved an energy resolution of 300~eV (FWHM) at 6~keV and a read-out noise of 33~e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-Kα and Kβ. Moreover, we produced a fully depleted layer with a thickness of 500μm. The event-driven readout mode has already been successfully demonstrated.
@article{arxiv.1408.4556,
title = {Development and Performance of Kyoto's X-ray Astronomical SOI pixel (SOIPIX) sensor},
author = {Takeshi G. Tsuru and Hideaki Matsumura and Ayaki Takeda and Takaaki Tanaka and Shinya Nakashima and Yasuo Arai and Koji Mori and Ryota Takenaka and Yusuke Nishioka and Takayoshi Kohmura and Takaki Hatsui and Takashi Kameshima and Kyosuke Ozaki and Yoshiki Kohmura and Tatsuya Wagai and Dai Takei and Shoji Kawahito and Keiichiro Kagawa and Keita Yasutomi and Hiroki Kamehama and Sumeet Shrestha},
journal= {arXiv preprint arXiv:1408.4556},
year = {2016}
}
Comments
7pages, 12figures, SPIE Astronomical Telescopes and Instrumentation 2014, Montreal, Quebec, Canada. appears as Proc. SPIE 9147, Space Telescopes and Instrumentation 2014: Ultraviolet to Gamma Ray