This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied. The prototype chip, manufactured in OKI 0.15 micron SOI process, features both analog and digital pixels on a 10 micron pitch. Results of tests performed with infrared laser and 1.35 GeV electrons and a first assessment of the effect of ionising and non-ionising doses are discussed.
@article{arxiv.0811.4540,
title = {Monolithic Pixel Sensors in Deep-Submicron SOI Technology with Analog and Digital Pixels},
author = {Marco Battaglia and Dario Bisello and Devis Contarato and Peter Denes and Piero Giubilato and Lindsay Glesener and Serena Mattiazzo and Chinh Vu},
journal= {arXiv preprint arXiv:0811.4540},
year = {2009}
}
Comments
5 pages, 7 figures, submitted to Nuclear Instruments and Methods A