Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation

Marco Battaglia; Dario Bisello; Richard Celestre; Devis Contarato; Peter Denes; Serena Mattiazzo; Craig Tindall

doi:10.1016/j.nima.2012.01.054

Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation

Instrumentation and Detectors 2015-06-03 v1

Authors: Marco Battaglia , Dario Bisello , Richard Celestre , Devis Contarato , Peter Denes , Serena Mattiazzo , Craig Tindall

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer contact is implanted on the back-plane. The response to X-rays from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source.

Keywords

SOI pixel sensor fully-depleted soft X-ray back-illuminated detector characterization

Cite

@article{arxiv.1111.2151,
  title  = {Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation},
  author = {Marco Battaglia and Dario Bisello and Richard Celestre and Devis Contarato and Peter Denes and Serena Mattiazzo and Craig Tindall},
  journal= {arXiv preprint arXiv:1111.2151},
  year   = {2015}
}

Comments

9 pages, 5 figures, submitted to Nuclear Instruments and Methods A

Related papers

View all related →