Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking

Marco Battaglia; Dario Bisello; Devis Contarato; Peter Denes; Piero Giubilato; Serena Mattiazzo; Devis Pantano; Sarah Zalusky

doi:10.1016/j.nima.2011.05.081

Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking

Instrumentation and Detectors 2011-10-19 v1

Authors: Marco Battaglia , Dario Bisello , Devis Contarato , Peter Denes , Piero Giubilato , Serena Mattiazzo , Devis Pantano , Sarah Zalusky

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Abstract

This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.

Keywords

pixel sensor SOI technology charged particle tracking charge collection detection efficiency single point resolution

Cite

@article{arxiv.1103.0881,
  title  = {Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking},
  author = {Marco Battaglia and Dario Bisello and Devis Contarato and Peter Denes and Piero Giubilato and Serena Mattiazzo and Devis Pantano and Sarah Zalusky},
  journal= {arXiv preprint arXiv:1103.0881},
  year   = {2011}
}

Comments

15 pages, 11 figures, submitted to Nuclear Instruments and Methods A

Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking

Abstract

Keywords

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