CMOS Pixel Sensor Response to Low Energy Electrons in Transmission Electron Microscopy

Marco Battaglia; Devis Contarato; Peter Denes; Dionisio Doering; Velimir Radmilovic

doi:10.1016/j.nima.2009.03.249

CMOS Pixel Sensor Response to Low Energy Electrons in Transmission Electron Microscopy

Instrumentation and Detectors 2009-06-25 v1

Authors: Marco Battaglia , Devis Contarato , Peter Denes , Dionisio Doering , Velimir Radmilovic

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Abstract

This paper presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 keV and 100 keV electrons. The point spread function is measured to be (13.0+/- 1.7) microns at 100 keV and (12.1 +/- 1.6) microns at 80 keV, for 20 micron pixels. Results agree well with values predicted by a Geant-4 and dedicated charge collection simulation.

Keywords

cmos pixel sensor transmission electron microscopy low energy electrons point spread function geant-4 simulation radiation tolerant design

Cite

@article{arxiv.0904.0552,
  title  = {CMOS Pixel Sensor Response to Low Energy Electrons in Transmission Electron Microscopy},
  author = {Marco Battaglia and Devis Contarato and Peter Denes and Dionisio Doering and Velimir Radmilovic},
  journal= {arXiv preprint arXiv:0904.0552},
  year   = {2009}
}

Comments

5 pages, 2 figures, submitted to Nucl. Instr. and Meth. A

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