A study of 3D pixel sensors of cell size 50 {\mu}m x 50 {\mu}m fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including efficiency, charge sharing, signal-to-noise, and resolution for different incidence angles.
@article{arxiv.1806.01435,
title = {First study of small-cell 3D Silicon Pixel Detectors for the High Luminosity LHC},
author = {E. Currás and J. Duarte-Campderrós and M. Fernández and A. García and G. Gómez and J. González and R. Jaramillo and D. Moya and I. Vila and S. Hidalgo and M. Manna and G. Pellegrini and D. Quirion and D. Pitzl and A. Ebrahimi and T. Rohe and S. Wiederkehr},
journal= {arXiv preprint arXiv:1806.01435},
year = {2019}
}