Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure able to withstand doses in excess of 1 MRad. Data collected with electron beams at various energies of interest in electron microscopy are compared to predictions of simulation and to 1.5 GeV electron data to disentagle the effect of multiple scattering. The point spread function measured with 300 keV electrons is (8.1 +/- 1.6) micron for 10 micron pixel and (10.9 +/- 2.3) micron for 20 micron pixels, respectively, which agrees well with the values of 8.4 micron and 10.5 micron predicted by our simulation.
@article{arxiv.0811.2833,
title = {A Rad-hard CMOS Active Pixel Sensor for Electron Microscopy},
author = {Marco Battaglia and Devis Contarato and Peter Denes and Dionisio Doering and Piero Giubilato and Tae Sung Kim and Serena Mattiazzo and Velimir Radmilovic and Sarah Zalusky},
journal= {arXiv preprint arXiv:0811.2833},
year = {2009}
}
Comments
16 pages, 9 figures, submitted to Nucl. Instr and Meth A