Radiation Tolerance of CMOS Monolithic Active Pixel Sensors with Self-Biased Pixels

M. Deveaux; S. Amar-Youcef; A. Besson; G. Claus; C. Colledani; M. Dorokhov; C. Dritsa; W. Dulinski; I. Froehlich; M. Goffe; D. Grandjean; S. Heini; A. Himmi; C. Hu; K. Jaaskelainen; C. Muentz; A. Shabetai; J. Stroth; M. Szelezniak; I. Valin; M. Winter

doi:10.1016/j.nima.2010.04.045

Radiation Tolerance of CMOS Monolithic Active Pixel Sensors with Self-Biased Pixels

Instrumentation and Detectors 2010-11-30 v1 Nuclear Experiment

Authors: M. Deveaux , S. Amar-Youcef , A. Besson , G. Claus , C. Colledani , M. Dorokhov , C. Dritsa , W. Dulinski , I. Froehlich , M. Goffe , D. Grandjean , S. Heini , A. Himmi , C. Hu , K. Jaaskelainen , C. Muentz , A. Shabetai , J. Stroth , M. Szelezniak , I. Valin , M. Winter

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Abstract

CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called self bias pixel. Moreover, we discuss radiation hardened sensor designs which allow operating detectors after exposing them to irradiation doses above 1 Mrad

Keywords

CMOS monolithic active pixel sensors radiation tolerance self-biased pixels vertex detectors ionizing radiation damage radiation hardened design

Cite

@article{arxiv.0908.4202,
  title  = {Radiation Tolerance of CMOS Monolithic Active Pixel Sensors with Self-Biased Pixels},
  author = {M. Deveaux and S. Amar-Youcef and A. Besson and G. Claus and C. Colledani and M. Dorokhov and C. Dritsa and W. Dulinski and I. Froehlich and M. Goffe and D. Grandjean and S. Heini and A. Himmi and C. Hu and K. Jaaskelainen and C. Muentz and A. Shabetai and J. Stroth and M. Szelezniak and I. Valin and M. Winter},
  journal= {arXiv preprint arXiv:0908.4202},
  year   = {2010}
}

Radiation Tolerance of CMOS Monolithic Active Pixel Sensors with Self-Biased Pixels

Abstract

Keywords

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