Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (> 2 kΩcm2) wafers. The chip size is equivalent to that of the current ATLAS pixel detector readout chip. One of the prototypes is used for detailed characterization of the sensor and the analog readout of the DMAPS. The other is a fully monolithic DMAPS including fast readout digital logic that handles the required hit rate. In order to yield a strong homogeneous electric field within the sensor volume, thinning of the wafer was tested. The prototypes were irradiated with X-ray up to a total ionization dose (TID) of 50 Mrad and with neutrons up to non-ionizing energy loss (NIEL) of 1015neq/cm2. The analog readout circuitry maintained its performance after TID irradiation, and the hit-efficiency at > 107 noise occupancy was as high as 98.9 % after NIEL irradiation.
@article{arxiv.1803.09260,
title = {Depleted Fully Monolithic Active CMOS Pixel Sensors (DMAPS) in High Resistivity 150~nm Technology for LHC},
author = {Toko Hirono and Marlon Barbero and Pierre Barrillon and Siddharth Bhat and Patrick Breugnon and Ivan Caicedo and Zongde Chen and Michael Daas and Yavuz Degerli and Fabrice Guilloux and Tomasz Hemperek and Fabian Hugging and Hans Kruger and Patrick Pangaud and Piotr Rymaszewski and Philippe Schwemling and Maxence Vandenbroucke and Tianyang Wang and Norbert Wermes},
journal= {arXiv preprint arXiv:1803.09260},
year = {2019}
}