Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted monolithic active pixel sensors (DMAPS) are able to cope with the high-rate and high-radiation environments faced in modern high-energy physics experiments. TJ-Monopix2 is the latest iteration of a DMAPS development line designed in 180 nm TowerSemicondutor technology, which features a large scale (2 x 2) cm2 chip divided into (512 x 512) pixels with a pitch of (33 x 33) um2. All in-pixel electronics are separated from its small collection electrode and process modifications are implemented to improve charge collection efficiency especially after irradiation. The latest laboratory measurements and investigations of a threshold variation observed for TJ-Monopix2 in typical operating conditions are presented.
@article{arxiv.2402.12153,
title = {Cross talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology},
author = {Lars Schall and Christian Bespin and Ivan Caicedo and Jochen Dingfelder and Tomasz Hemperek and Toko Hirono and Fabian Hügging and Hans Krüger and Konstantinos Moustakas and Heinz Pernegger and Petra Riedler and Walter Snoeys and Norbert Wermes and Sinuo Zhang},
journal= {arXiv preprint arXiv:2402.12153},
year = {2024}
}
Comments
Conference proceedings for 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD13), submitted to NIM-A