We developed a beam telescope system comprising five layers of 300-μm-thick INTPIX4NA monolithic pixel sensors with each pixel size of 17 μm square. The sensors were fabricated using silicon-on-insulator (SOI) technology. The signal-to-noise ratio of 140--230 is realized at a bias voltage of 20~V. The tracker system was tested using a positron beam of 200--822 MeV/c, and various tracking methods are examined to optimize spatial precision achievable at these energies. The best tracking precision including the precision of the sensor under test itself is 11.04 ± 0.10 μm for 822-MeV/c positrons for an equidistant sensor spacing of 32 mm. The achieved precision results combined with the intrinsic spatial resolution value obtained for a similar system using 120 GeV protons are used to estimate the tracking performance of electrons in the GeV energy range; a tracking precision of 2.22 μm is evaluated for 5-GeV electrons. The method to estimate the tracking performance is verified using a Geant4-based simulation. The developed high precision tracker system enables to map the detailed performance of the sensors with pixel sizes of O(10 μm), therefore will be a powerful system for development of devices targeting precision position resolutions.
@article{arxiv.2205.03838,
title = {Precision beam telescope based on SOI pixel sensor technology for electrons in the energy range of sub-GeV to GeV},
author = {Hisanori Suzuki and Takumi Omori and Kazuhiko Hara and Hiroki Yamauchi and Miho Yamada and Toru Tsuboyama and Ayaki Takeda},
journal= {arXiv preprint arXiv:2205.03838},
year = {2022}
}