Development of a Neutron Imaging Sensor using INTPIX4-SOI Pixelated Silicon Devices

Y. Kamiya; T. Miyoshi; H. Iwase; T. Inada; A. Mizushima; Y. Mita; K. Shimazoe; H. Tanaka; I. Kurachi; Y. Arai

doi:10.1016/j.nima.2020.164400

Development of a Neutron Imaging Sensor using INTPIX4-SOI Pixelated Silicon Devices

Instrumentation and Detectors 2020-08-04 v1

Authors: Y. Kamiya , T. Miyoshi , H. Iwase , T. Inada , A. Mizushima , Y. Mita , K. Shimazoe , H. Tanaka , I. Kurachi , Y. Arai

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Abstract

We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor's responses for neutrons. Detection efficiency is measured to be around $1.5$ \% for thermal neutrons. Upper bound of spatial resolution is evaluated to be $4.1 \pm 0.2 ~\mu$ m in terms of a standard deviation of the line spread function.

Keywords

neutron detection particle detector silicon photomultipliers

Cite

@article{arxiv.2006.05658,
  title  = {Development of a Neutron Imaging Sensor using INTPIX4-SOI Pixelated Silicon Devices},
  author = {Y. Kamiya and T. Miyoshi and H. Iwase and T. Inada and A. Mizushima and Y. Mita and K. Shimazoe and H. Tanaka and I. Kurachi and Y. Arai},
  journal= {arXiv preprint arXiv:2006.05658},
  year   = {2020}
}

Comments

6 pages, 7 figures, 12th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detector - HSTD12

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