Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched in the buried oxide, allowing pixel implanting and reverse biasing. This paper summarizes the performances achieved with a first prototype manufactured in the OKI 0.15 micrometer FD-SOI process, featuring analog and digital pixels on a 10 micrometer pitch. The design and preliminary results on the analog section of a second prototype manufactured in the OKI 0.20 micrometer FD-SOI process are briefly discussed.
@article{arxiv.0903.3205,
title = {Monolithic Pixel Sensors in Deep-Submicron SOI Technology},
author = {Marco Battaglia and Dario Bisello and Devis Contarato and Peter Denes and Piero Giubilato and Lindsay Glesener and Serena Mattiazzo and Chinh Qu Vu},
journal= {arXiv preprint arXiv:0903.3205},
year = {2009}
}
Comments
Proceedings of the PIXEL 2008 International Workshop, FNAL, Batavia, IL, 23-26 September 2008. Submitted to JINST - Journal of Instrumentation