Nanophotonic devices on thin buried oxide Silicon-On-Insulator substrates
Optics
2010-03-30 v1
Abstract
We demonstrate a silicon photonic platform using thin buried oxide silicon-on-insulator (SOI) substrates using localized substrate removal. We show high confinement silicon strip waveguides, micro-ring resonators and nanotapers using this technology. Propagation losses for the waveguides using the cutback method are 3.88 dB/cm for the quasi-TE mode and 5.06 dB/cm for the quasi-TM mode. Ring resonators with a loaded quality factor (Q) of 46,500 for the quasi-TM mode and intrinsic Q of 148,000 for the quasi-TE mode have been obtained. This process will enable the integration of photonic structures with thin buried oxide SOI based electronics.
Keywords
Cite
@article{arxiv.0912.0775,
title = {Nanophotonic devices on thin buried oxide Silicon-On-Insulator substrates},
author = {Suresh Sridaran and Sunil A. Bhave},
journal= {arXiv preprint arXiv:0912.0775},
year = {2010}
}