High Q SiC microresonators
Optics
2015-06-16 v1
Abstract
We demonstrate photonic devices based on standard 3C SiC epitaxially grown on silicon. We achieve high optical confinement by taking advantage of the high stiffness of SiC and undercutting the underlying silicon substrate. We demonstrate a 20 um radius suspended microring resonator with Q of 18000 fabricated on commercially available SiC-on-silicon substrates.
Cite
@article{arxiv.1306.2937,
title = {High Q SiC microresonators},
author = {Jaime Cardenas and Mian Zhang and Christopher T. Phare and Shreyas Y. Shah and Carl B. Poitras and Michal Lipson},
journal= {arXiv preprint arXiv:1306.2937},
year = {2015}
}